SG50N06S IGBT. Datasheet pdf. Equivalent

   Type Designator: SG50N06S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 340 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: SOT227

SG50N06S Transistor Equivalent Substitute - IGBT Cross-Reference Search

SG50N06S Datasheet (PDF)

..1. Size:152K sirectifier
sg50n06s.pdf

SG50N06S, SG50N06DSDiscrete IGBTsC Dim. Millimeter InchesEDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169G=Gate, C=Collector, F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193E=EmitterH 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0

7.1. Size:101K sirectifier
sg50n06dt.pdf

SG50N06T, SG50N06DTDiscrete IGBTsDimensions TO-247AD Dim. Millimeter InchesMin. Max. Min. Max.A 19.81 20.32 0.780 0.800B 20.80 21.46 0.819 0.845C 15.75 16.26 0.610 0.640EG=Gate, C=Collector,D 3.55 3.65 0.140 0.144C(TAB)CE=Emitter,TAB=CollectorGE 4.32 5.49 0.170 0.216F 5.4 6.2 0.212 0.244G 1.65 2.13 0.065 0.084H - 4.5 - 0.177J 1.0 1.4 0.040 0.055K 10.8 11.0

7.2. Size:101K sirectifier
sg50n06t.pdf

7.3. Size:149K sirectifier
sg50n06d2s.pdf

SG50N06D2S, SG50N06D3SDiscrete IGBTsDim. Millimeter InchesDimensions SOT-227(ISOTOP)Min. Max. Min. Max.A 31.50 31.88 1.240 1.255B 7.80 8.20 0.307 0.323C 4.09 4.29 0.161 0.169D 4.09 4.29 0.161 0.169E 4.09 4.29 0.161 0.169F 14.91 15.11 0.587 0.595G 30.12 30.30 1.186 1.193H 37.80 38.20 1.489 1.505J 11.68 12.22 0.460 0.481K 8.92 9.60 0.351 0.378L 0.76 0.84 0.030 0.033

7.4. Size:149K sirectifier
sg50n06d3s.pdf