VS-GT100TP120N Specs and Replacement
Type Designator: VS-GT100TP120N
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 652 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 57 nS
Coesⓘ - Output Capacitance, typ: 460 pF
Package: INT-A-PAK VS-GT100TP120N Substitution - IGBT ⓘ Cross-Reference Search
VS-GT100TP120N datasheet
vs-gt100tp120n.pdf
VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using ... See More ⇒
vs-gt100tp60n.pdf
VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (... See More ⇒
vs-gt100la120ux.pdf
VS-GT100LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved ... See More ⇒
vs-gt100na120ux.pdf
VS-GT100NA120UX www.vishay.com Vishay Semiconductors High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved... See More ⇒
Specs: SG50N06S , SG50N06T , SG75S12S , SG7N06DP , SG7N06P , SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , MBQ40T65FDSC , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX , VS-GT140DA60U , VS-GT175DA120U , VS-GT300FD060N , VS-GT300YH120N , VS-GT400TH120N .
Keywords - VS-GT100TP120N transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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