All IGBT. VS-GT300YH120N Datasheet

 

VS-GT300YH120N IGBT. Datasheet pdf. Equivalent

Type Designator: VS-GT300YH120N

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 1042

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2.17

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 341

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 263

Maximum Collector Capacity (Cc), pF: 1400

Package: INT-A-Pak

VS-GT300YH120N Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-GT300YH120N Datasheet (PDF)

1.1. vs-gt300yh120n.pdf Size:189K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT300YH120N www.vishay.com Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES • Trench IGBT technology with positive temperature coefficient • Low switching losses • Maximum junction temperature 150 °C • 10 µs short circuit capability • Low inductance case Double INT-A-PAK • HEXFRED® antiparallel and series

2.1. vs-gt300fd060n.pdf Size:163K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt® antiparallel and clamping diodes • Short circuit capability • Low stray internal inductances • Low switching loss • UL approved file E78996 • Material categorization: for definitions of compliance

5.1. vs-gt400th60n.pdf Size:155K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT400TH60N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 600 V and 400 A FEATURES • Low VCE(on) trench IGBT technology • Low switching losses • 5 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD

5.2. vs-gt175da120u.pdf Size:274K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 10 µs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 150 °C SOT-227 • Fully isolated package • Speed 4 kHz to 30

5.3. vs-gt400th120n.pdf Size:127K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT400TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 400 A FEATURES • Low VCE(on) trench IGBT technology • Low switching losses • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FW

5.4. vs-gt75np120n.pdf Size:89K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT75NP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD

5.5. vs-gt100na120ux.pdf Size:172K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT100NA120UX www.vishay.com Vishay Semiconductors “High Side Chopper” IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 µs short circuit capability • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved

5.6. vs-gt100tp60n.pdf Size:181K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES • Low VCE(on) trench IGBT technology • 5 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (

5.7. vs-gt50tp120n.pdf Size:88K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT50TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A FEATURES • Low VCE(on) trench IGBT technology • Low switching losses • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD

5.8. vs-gt105la120ux.pdf Size:154K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT105LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 µs short circuit capability • Fully isolated package • Speed 4 kHz to 30 kHz SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard ou

5.9. vs-gt100la120ux.pdf Size:172K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT100LA120UX www.vishay.com Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 µs short circuit capability • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved

5.10. vs-gt50tp60n.pdf Size:1021K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES • Low VCE(on) trench IGBT technology • 5 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Di

5.11. vs-gt100tp120n.pdf Size:184K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES • Low VCE(sat) trench IGBT technology • 10 µs short circuit capability • VCE(sat) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using

5.12. vs-gt140da60u.pdf Size:299K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 140 A FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 µs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • TJ maximum = 175 °C SOT-227 • Fully isolated package • Very low internal i

5.13. vs-gt400th120u.pdf Size:292K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT400TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V, 400 A FEATURES • Low VCE(on) trench IGBT technology • 10 µs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper basepl

5.14. vs-gt105na120ux.pdf Size:153K _igbt

VS-GT300YH120N
VS-GT300YH120N

VS-GT105NA120UX www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 µs short circuit capability • Fully isolated package SOT-227 • Speed 4 kHz to 30 kHz • Very low internal inductance ( 5 nH typical) • Industry standard ou

Datasheet: VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX , VS-GT140DA60U , VS-GT175DA120U , VS-GT300FD060N , SKA06N60 , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N , VS-GT75NP120N , DL2G100SH6A , DL2G100SH6N .

 


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