All IGBT. DL2G50SH12A Datasheet

 

DL2G50SH12A IGBT. Datasheet pdf. Equivalent


   Type Designator: DL2G50SH12A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 340
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 8
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 60
   Collector Capacity (Cc), typ, pF: 300
   Package: 6DM-2

 DL2G50SH12A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DL2G50SH12A Datasheet (PDF)

 ..1. Size:635K  dawin
 dl2g50sh12a.pdf

DL2G50SH12A DL2G50SH12A

D WTMD WTMDL2G50SH12ADAWIN ElectronicsDAWIN ElectronicsApr. 2008High Power SPT+ & Lugged Type Dual Co-pack IGBTDescriptionEquivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverter

 6.1. Size:669K  dawin
 dl2g50sh6a.pdf

DL2G50SH12A DL2G50SH12A

Discontinuance (Aug. 31, 2013) DL2G50SH6A May. 2009 High Power NPT & Lugged Type Dual Co-pack IGBT Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors driv

 6.2. Size:690K  dawin
 dl2g50sh6n.pdf

DL2G50SH12A DL2G50SH12A

Discontinuance (Aug. 31, 2013) DL2G50SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and othe

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