DM2G50SH6A IGBT. Datasheet pdf. Equivalent
Type Designator: DM2G50SH6A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 275 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 750 pF
Qgⓘ - Total Gate Charge, typ: 300 nC
Package: MODULE
DM2G50SH6A Transistor Equivalent Substitute - IGBT Cross-Reference Search
DM2G50SH6A Datasheet (PDF)
dm2g50sh6a.pdf
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