VS-GB100TP120N PDF and Equivalents Search

 

VS-GB100TP120N Specs and Replacement

Type Designator: VS-GB100TP120N

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 650 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 61 nS

Coesⓘ - Output Capacitance, typ: 520 pF

Package: MODULE

 VS-GB100TP120N Substitution

- IGBT ⓘ Cross-Reference Search

 

VS-GB100TP120N datasheet

 ..1. Size:88K  vishay
vs-gb100tp120n.pdf pdf_icon

VS-GB100TP120N

VS-GB100TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Is... See More ⇒

 1.1. Size:88K  vishay
vs-gb100tp120u.pdf pdf_icon

VS-GB100TP120N

VS-GB100TP120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop... See More ⇒

 5.1. Size:158K  vishay
vs-gb100th120u.pdf pdf_icon

VS-GB100TP120N

VS-GB100TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A FEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Double INT-A-P... See More ⇒

 5.2. Size:153K  vishay
vs-gb100th120n.pdf pdf_icon

VS-GB100TP120N

VS-GB100TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A FEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base... See More ⇒

Specs: SHDG1025 , SHSMG1009 , SHSMG1010 , VS-GB100LH120N , VS-GB100LP120N , VS-GB100NH120N , VS-GB100TH120N , VS-GB100TH120U , RJP63F3DPP-M0 , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N , VS-GB150TH120U , VS-GB150TS60NPBF , VS-GB200LH120N , VS-GB200NH120N .

History: RJH60D2DPP-M0 | SRE50N120FSUDATP

Keywords - VS-GB100TP120N transistor spec

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