VS-GB100TS60NPBF IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GB100TS60NPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 219 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 74 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Package: MODULE
VS-GB100TS60NPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GB100TS60NPBF Datasheet (PDF)
vs-gb100ts60npbf.pdf
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vs-gb100th120u.pdf
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vs-gb100th120n.pdf
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vs-gb100tp120u.pdf
VS-GB100TP120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 100 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Rugged with ultrafast performance Square RBSOA Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Cop
vs-gb100tp120n.pdf
VS-GB100TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2 in 1 Package, 1200 V, 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Is
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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