VS-GB200LH120N Specs and Replacement
Type Designator: VS-GB200LH120N
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1562 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.07 V @25℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 1640 pF
Package: MODULE VS-GB200LH120N Substitution - IGBT ⓘ Cross-Reference Search
VS-GB200LH120N datasheet
vs-gb200lh120n.pdf
VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW... See More ⇒
vs-gb200th120n.pdf
VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES Low VCE(on) SPT+ IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK Iso... See More ⇒
vs-gb200ts60npbf.pdf
VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge (Ultrafast Speed IGBT), 209 A FEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras... See More ⇒
vs-gb200nh120n.pdf
VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW... See More ⇒
Specs: VS-GB100TH120U , VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N , VS-GB150TH120U , VS-GB150TS60NPBF , MBQ50T65FDSC , VS-GB200NH120N , VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF , VS-GA100TS60SFPBF , VS-GA200HS60S1PBF , VS-GA200SA60UP , VS-GA200TH60S .
History: TT040K120EQ | SGW13N60UF
Keywords - VS-GB200LH120N transistor spec
VS-GB200LH120N cross reference
VS-GB200LH120N equivalent finder
VS-GB200LH120N lookup
VS-GB200LH120N substitution
VS-GB200LH120N replacement
History: TT040K120EQ | SGW13N60UF
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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