VS-GA200SA60UP IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GA200SA60UP
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.92 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 1000 pF
Package: SOT-227
VS-GA200SA60UP Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GA200SA60UP Datasheet (PDF)
vs-ga200sa60up.pdf
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vs-ga200hs60s1pbf.pdf
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vs-ga200th60s.pdf
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vs-ga250sa60s.pdf
VS-GA250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Ultralow VCE(on), 250 AFEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outlineSOT-227 Designed and qualified for i
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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