All IGBT. VS-GA200SA60UP Datasheet

 

VS-GA200SA60UP IGBT. Datasheet pdf. Equivalent


   Type Designator: VS-GA200SA60UP
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.92 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 79 nS
   Coesⓘ - Output Capacitance, typ: 1000 pF
   Package: SOT-227

 VS-GA200SA60UP Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-GA200SA60UP Datasheet (PDF)

 ..1. Size:277K  vishay
vs-ga200sa60up.pdf

VS-GA200SA60UP
VS-GA200SA60UP

VS-GA200SA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 AFEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package (2500 VAC/RMS) Very low internal inductance ( 5 nH typi

 6.1. Size:145K  vishay
vs-ga200hs60s1pbf.pdf

VS-GA200SA60UP
VS-GA200SA60UP

VS-GA200HS60S1PbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half Bridge IGBT(Standard Speed IGBT), 200 AFEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Very low conduction losses Industry standard package UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compl

 6.2. Size:156K  vishay
vs-ga200th60s.pdf

VS-GA200SA60UP
VS-GA200SA60UP

VS-GA200TH60Swww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 600 V and 200 AFEATURES High short circuit capability 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Latch-up free Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery antiparalle

 8.1. Size:292K  vishay
vs-ga250sa60s.pdf

VS-GA200SA60UP
VS-GA200SA60UP

VS-GA250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Ultralow VCE(on), 250 AFEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outlineSOT-227 Designed and qualified for i

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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