VS-GB300NH120N IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GB300NH120N
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 1645
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 300
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 133
Collector Capacity (Cc), typ, pF: 1420
Package: MODULE
VS-GB300NH120N Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GB300NH120N Datasheet (PDF)
vs-gb300nh120n.pdf
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VS-GB300NH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 300 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bon
vs-gb300th120u.pdf
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VS-GB300TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 300 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low switching losses Rugged with ultrafast performance Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery
vs-gb300lh120n.pdf
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VS-GB300LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 300 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Dou
vs-gb300th120n.pdf
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VS-GB300TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 300 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bondin
vs-gb300ah120n.pdf
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VS-GB300AH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 1-in-1 Package, 1200 V and 300 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Dir
Datasheet: VS-GB200TS60NPBF , VS-GA100TS60SFPBF , VS-GA200HS60S1PBF , VS-GA200SA60UP , VS-GA200TH60S , VS-GA250SA60S , VS-GB300AH120N , VS-GB300LH120N , RJH60F5DPQ-A0 , VS-GB300TH120N , VS-GB300TH120U , VS-GB400AH120N , VS-GB400AH120U , VS-GB400TH120N , VS-GB400TH120U , VS-GB50LA120UX , VS-GB50LP120N .
![VS-GB300NH120N](https://alltransistors.com/images/us.png)
![VS-GB300NH120N](https://alltransistors.com/images/es.png)
![VS-GB300NH120N](https://alltransistors.com/images/ru.png)
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