All IGBT. VS-GB300TH120N Datasheet

 

VS-GB300TH120N Datasheet and Replacement


   Type Designator: VS-GB300TH120N
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1645 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 133 nS
   Coesⓘ - Output Capacitance, typ: 1420 pF
   Package: MODULE
      - IGBT Cross-Reference

 

VS-GB300TH120N Datasheet (PDF)

 ..1. Size:155K  vishay
vs-gb300th120n.pdf pdf_icon

VS-GB300TH120N

VS-GB300TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 300 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bondin

 1.1. Size:155K  vishay
vs-gb300th120u.pdf pdf_icon

VS-GB300TH120N

VS-GB300TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 300 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low switching losses Rugged with ultrafast performance Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery

 6.1. Size:155K  vishay
vs-gb300nh120n.pdf pdf_icon

VS-GB300TH120N

VS-GB300NH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 300 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bon

 6.2. Size:154K  vishay
vs-gb300lh120n.pdf pdf_icon

VS-GB300TH120N

VS-GB300LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 300 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Dou

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGB19NC60KDT4 | 1MB08D-120 | IXGT40N60C2D1 | DM2G75SH6A | BUK856-400IZ | MMG100S120B6TC | IXGH64N60A3

Keywords - VS-GB300TH120N transistor datasheet

 VS-GB300TH120N cross reference
 VS-GB300TH120N equivalent finder
 VS-GB300TH120N lookup
 VS-GB300TH120N substitution
 VS-GB300TH120N replacement

 

 
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