VS-GB75LP120N Spec and Replacement, IGBT Equivalent Finder, Cross Reference

VS-GB75LP120N Specs and Replacement

Type Designator: VS-GB75LP120N

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 658 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.82 V @25℃

tr ⓘ - Rise Time, typ: 37 nS

Coesⓘ - Output Capacitance, typ: 400 pF

Package: MODULE

VS-GB75LP120N Substitution

- IGBT ⓘ Cross-Reference Search

VS-GB75LP120N datasheet

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