All IGBT. VS-GB90SA120U Datasheet

 

VS-GB90SA120U Datasheet and Replacement


   Type Designator: VS-GB90SA120U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 414 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 38 nS
   Qgⓘ - Total Gate Charge, typ: 690 nC
   Package: SOT-227
      - IGBT Cross-Reference

 

VS-GB90SA120U Datasheet (PDF)

 ..1. Size:291K  vishay
vs-gb90sa120u.pdf pdf_icon

VS-GB90SA120U

VS-GB90SA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 AFEATURES NPT Gen 5 IGBT technology Square RBSOA Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outlineSOT-227 UL approved file E78996 Material categorization:

 7.1. Size:305K  vishay
vs-gb90da60u.pdf pdf_icon

VS-GB90SA120U

VS-GB90DA60Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 90 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Square RBSOA HEXFRED anti-parallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nH typical)SOT-227 Industry st

 7.2. Size:322K  vishay
vs-gb90da120u.pdf pdf_icon

VS-GB90SA120U

VS-GB90DA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 AFEATURES NPT Gen 5 IGBT technology Square RBSOA HEXFRED low Qrr, low switching energy Positive VCE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nH typical)SOT-227 Industry standard outline UL appro

 9.1. Size:145K  vishay
vs-gb55la120ux.pdf pdf_icon

VS-GB90SA120U

VS-GB55LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 AFEATURES NPT Generation V IGBT technology Square RBSOA HEXFRED clamping diode Positive VCE(on) temperature coefficient Fully isolated package Speed 8 kHz to 60 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard

Datasheet: VS-GB75LP120N , VS-GB75NA60UF , VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , IRG4PC50UD , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G .

History: AOTF5B65M2 | MMG300D120B6UC

Keywords - VS-GB90SA120U transistor datasheet

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