All IGBT. HGTP2N120BND Datasheet

 

HGTP2N120BND IGBT. Datasheet pdf. Equivalent


   Type Designator: HGTP2N120BND
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 2N120BND
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 104 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8(typ) V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 11 nS
   Qgⓘ - Total Gate Charge, typ: 24 nC
   Package: TO220AB

 HGTP2N120BND Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP2N120BND Datasheet (PDF)

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 hgtp2n120bnd hgt1s2n120bnds.pdf

HGTP2N120BND HGTP2N120BND

HGTP2N120BND, HGT1S2N120BNDSData Sheet January 2000 File Number 4698.212A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 12A, 1200V, TC = 25oCThe HGTP2N120BND and HGT1S2N120BNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150oCmembers o

 3.1. Size:85K  1
 hgtp2n120bn hgtd2n120bns hgt1s120bns.pdf

HGTP2N120BND HGTP2N120BND

HGTP2N120BN, HGTD2N120BNS,HGT1S2N120BNSData Sheet January 2000 File Number 4696.212A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTP2N120BN, HGTD2N120BNS, and 12A, 1200V, TC = 25oCHGT1S2N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 160ns at

 5.1. Size:498K  1
 hgtp2n120cn hgt1s2n120cn.pdf

HGTP2N120BND HGTP2N120BND

March 2005HGTP2N120CN, HGT1S2N120CN13A, 1200V, NPT Series N-Channel IGBTFeatures Description 13A, 1200V, TC = 25C The HGTP2N120CN and HGT1S2N120CN are Non-PunchThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs combine Typical Fall Time 360ns at TJ = 150C the best features of MOSF

 5.2. Size:92K  1
 hgtp2n120cnd hgt1s2n120cnds.pdf

HGTP2N120BND HGTP2N120BND

HGTP2N120CND, HGT1S2N120CNDSData Sheet January 2000 File Number 4681.213A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 13A, 1200V, TC = 25oCThe HGTP2N120CND and HGT1S2N120CNDS are 1200V Switching SOA CapabilityNon-Punch Through (NPT) IGBT designs. They are new Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oCmembers

 5.3. Size:89K  1
 hgtd2n120cns hgtp2n120cn hgt1s2n120cns.pdf

HGTP2N120BND HGTP2N120BND

HGTD2N120CNS, HGTP2N120CN,HGT1S2N120CNSData Sheet January 2000 File Number 4680.213A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD2N120CNS, HGTP2N120CN, and 13A, 1200V, TC = 25oCHGT1S2N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 360ns at

Datasheet: HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , HGTP20N60C3R , HGTP2N120BN , GT30F126 , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D .

 

 
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