All IGBT. VS-GP250SA60S Datasheet

 

VS-GP250SA60S IGBT. Datasheet pdf. Equivalent


   Type Designator: VS-GP250SA60S
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 429 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 239 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.1 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 85 nS
   Qgⓘ - Total Gate Charge, typ: 942 nC
   Package: SOT-227

 VS-GP250SA60S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

VS-GP250SA60S Datasheet (PDF)

 ..1. Size:275K  vishay
vs-gp250sa60s.pdf

VS-GP250SA60S
VS-GP250SA60S

VS-GP250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 AProprietary Vishay IGBT Silicon L SeriesFEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitio

 9.1. Size:154K  vishay
vs-gp400td60s.pdf

VS-GP250SA60S
VS-GP250SA60S

VS-GP400TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 400 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

 9.2. Size:199K  vishay
vs-gp100ts60sfpbf.pdf

VS-GP250SA60S
VS-GP250SA60S

VS-GP100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization: for defin

 9.3. Size:158K  vishay
vs-gp300td60s.pdf

VS-GP250SA60S
VS-GP250SA60S

VS-GP300TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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