VS-GP250SA60S Specs and Replacement
Type Designator: VS-GP250SA60S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 429 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 239 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
Package: SOT-227
VS-GP250SA60S Substitution - IGBT ⓘ Cross-Reference Search
VS-GP250SA60S datasheet
vs-gp250sa60s.pdf
VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon L Series FEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization for definitio... See More ⇒
vs-gp100ts60sfpbf.pdf
VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 A Proprietary Vishay IGBT Silicon L Series FEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization for defin... See More ⇒
Specs: VS-GB75TP120N , VS-GB75TP120U , VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , AOK40B65H2AL , VS-GP300TD60S , VS-GP400TD60S , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 .
Keywords - VS-GP250SA60S transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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