VS-GP250SA60S Datasheet and Replacement
Type Designator: VS-GP250SA60S
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 429 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 239 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.1 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 85 nS
Qg ⓘ - Total Gate Charge, typ: 942 nC
Package: SOT-227
VS-GP250SA60S substitution
VS-GP250SA60S Datasheet (PDF)
vs-gp250sa60s.pdf

VS-GP250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 AProprietary Vishay IGBT Silicon L SeriesFEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitio
vs-gp400td60s.pdf

VS-GP400TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 400 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending
vs-gp100ts60sfpbf.pdf

VS-GP100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization: for defin
vs-gp300td60s.pdf

VS-GP300TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: SKM195GAR063DN
Keywords - VS-GP250SA60S transistor datasheet
VS-GP250SA60S cross reference
VS-GP250SA60S equivalent finder
VS-GP250SA60S lookup
VS-GP250SA60S substitution
VS-GP250SA60S replacement
History: SKM195GAR063DN



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