All IGBT. F3L300R12ME4_B23 Datasheet

 

F3L300R12ME4_B23 IGBT. Datasheet pdf. Equivalent


   Type Designator: F3L300R12ME4_B23
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1550 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE

 F3L300R12ME4_B23 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

F3L300R12ME4_B23 Datasheet (PDF)

 0.1. Size:907K  infineon
f3l300r12me4 b23.pdf

F3L300R12ME4_B23
F3L300R12ME4_B23

/ Technical InformationIGBT-F3L300R12ME4_B23IGBT-modulesEconoDUAL3 /IGBT4HE NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRM Typical Applications

 0.2. Size:906K  infineon
f3l300r12me4 b22.pdf

F3L300R12ME4_B23
F3L300R12ME4_B23

/ Technical InformationIGBT-F3L300R12ME4_B22IGBT-modulesEconoDUAL3 /IGBT4HE NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRM Typical Applications

 2.1. Size:637K  infineon
f3l300r12me4-b23.pdf

F3L300R12ME4_B23
F3L300R12ME4_B23

Technische Information / Technical InformationIGBT-ModulF3L300R12ME4_B23IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-L

 2.2. Size:709K  infineon
f3l300r12me4-b22.pdf

F3L300R12ME4_B23
F3L300R12ME4_B23

Technische Information / Technical InformationIGBT-ModuleF3L300R12ME4_B22IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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