All IGBT. F3L300R12MT4_B23 Datasheet

 

F3L300R12MT4_B23 Datasheet and Replacement


   Type Designator: F3L300R12MT4_B23
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1550 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Package: MODULE
 

 F3L300R12MT4_B23 substitution

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F3L300R12MT4_B23 Datasheet (PDF)

 0.1. Size:665K  infineon
 f3l300r12mt4 b22.pdf pdf_icon

F3L300R12MT4_B23

Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B22IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

 0.2. Size:663K  infineon
 f3l300r12mt4 b23.pdf pdf_icon

F3L300R12MT4_B23

Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B23IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

 2.1. Size:626K  infineon
 f3l300r12mt4p-b23.pdf pdf_icon

F3L300R12MT4_B23

F3L300R12MT4P_B23EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications 3-

 2.2. Size:629K  infineon
 f3l300r12mt4p-b22.pdf pdf_icon

F3L300R12MT4_B23

F3L300R12MT4P_B22EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications 3-

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History: F4-150R12KS4 | IRGS4607D | MMG200DR120DE | CPV363M4KPBF

Keywords - F3L300R12MT4_B23 transistor datasheet

 F3L300R12MT4_B23 cross reference
 F3L300R12MT4_B23 equivalent finder
 F3L300R12MT4_B23 lookup
 F3L300R12MT4_B23 substitution
 F3L300R12MT4_B23 replacement

 

 
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