HGTP3N60A4 Datasheet. Specs and Replacement
Type Designator: HGTP3N60A4 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 70 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 17 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: TO220AB
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HGTP3N60A4 datasheet
hgtd3n60a4s hgtp3n60a4.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
hgtd3n60c3s hgtp3n60c3.pdf
HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1... See More ⇒
Specs: HGTP20N60A4, HGTP20N60B3, HGTP20N60C3, HGTP20N60C3R, HGTP2N120BN, HGTP2N120BND, HGTP2N120CN, HGTP2N120CND, IHW20N135R5, HGTP3N60A4D, HGTP3N60B3, HGTP3N60B3D, HGTP3N60C3, HGTP3N60C3D, HGTP5N120BN, HGTP5N120BND, HGTP5N120CN
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