F4-50R12KS4 IGBT. Datasheet pdf. Equivalent
Type Designator: F4-50R12KS4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 355 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 50 nS
Package: MODULE
F4-50R12KS4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F4-50R12KS4 Datasheet (PDF)
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