F4-50R12KS4_B11 Specs and Replacement
Type Designator: F4-50R12KS4_B11
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 355 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Package: MODULE F4-50R12KS4_B11 Substitution - IGBT ⓘ Cross-Reference Search
F4-50R12KS4_B11 datasheet
f4-50r12ks4 b11.pdf
/ Technical Information IGBT- F4-50R12KS4_B11 IGBT-modules EconoPACK 2 IGBT pressfit NTC EconoPACK 2 module with the fast IGBT2 for high-frequency switching and PressFIT / NTC / Preliminary Data V = 1200V CES I = 50A / I = 100A C nom CRM Typ... See More ⇒
f4-50r12ks4.pdf
Technische Information / Technical Information IGBT-Module F4-50R12KS4 IGBT-modules Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70 C, T = 150 C I 50 A C vj max C nom Continuous DC collector cur... See More ⇒
f4-50r12ms4.pdf
Technische Information / Technical Information IGBT-Module F4-50R12MS4 IGBT-modules EconoDUAL 2 Modul mit schnellem IGBT2 f r hochfrequentes Schalten und NTC EconoDUAL 2 module with the fast IGBT2 for high-frequency switching and NTC V = 1200V CES I = 50A / I = 100A C nom CRM Typische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency ... See More ⇒
Specs: F4-100R06KL4 , F4-100R12KS4 , F4-150R12KS4 , F4-200R06KL4 , F4-30R06W1E3 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 , GT30J124 , F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 , F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , FB15R06KL4B1 .
Keywords - F4-50R12KS4_B11 transistor spec
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