F4-50R12KS4_B11 IGBT. Datasheet pdf. Equivalent
Type Designator: F4-50R12KS4_B11
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 355 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 50 nS
Package: MODULE
F4-50R12KS4_B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F4-50R12KS4_B11 Datasheet (PDF)
f4-50r12ks4 b11.pdf
/ Technical InformationIGBT-F4-50R12KS4_B11IGBT-modulesEconoPACK2 IGBT pressfitNTCEconoPACK2 module with the fast IGBT2 for high-frequency switching and PressFIT / NTC / Preliminary DataV = 1200VCESI = 50A / I = 100AC nom CRM Typ
f4-50r12ks4.pdf
Technische Information / Technical InformationIGBT-ModuleF4-50R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 70C, T = 150C I 50 AC vj max C nomContinuous DC collector cur
f4-50r12ms4.pdf
Technische Information / Technical InformationIGBT-ModuleF4-50R12MS4IGBT-modulesEconoDUAL2 Modul mit schnellem IGBT2 fr hochfrequentes Schalten und NTCEconoDUAL2 module with the fast IGBT2 for high-frequency switching and NTCV = 1200VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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