HGTP3N60B3 Datasheet. Specs and Replacement

Type Designator: HGTP3N60B3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 33.3 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 7 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Package: TO220AB

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HGTP3N60B3 datasheet

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HGTP3N60B3

HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode 7A, 600V TC = 25oC The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capability high voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC o... See More ⇒

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HGTP3N60B3

HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated 6A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 1... See More ⇒

Specs: HGTP20N60C3, HGTP20N60C3R, HGTP2N120BN, HGTP2N120BND, HGTP2N120CN, HGTP2N120CND, HGTP3N60A4, HGTP3N60A4D, IRGP4086, HGTP3N60B3D, HGTP3N60C3, HGTP3N60C3D, HGTP5N120BN, HGTP5N120BND, HGTP5N120CN, HGTP5N120CND, HGTP6N40E1D

Keywords - HGTP3N60B3 transistor spec

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