FD600R17KE3_B2 IGBT. Datasheet pdf. Equivalent
Type Designator: FD600R17KE3_B2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 4300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 160 nS
Package: MODULE
FD600R17KE3_B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FD600R17KE3_B2 Datasheet (PDF)
fd600r17ke3 b2.pdf
Technische Information / Technical InformationIGBT-ModuleFD600R17KE3_B2IGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 600 AC vj max C nomContinuous DC col
fd600r17ke3-b2.pdf
Technische Information / Technical InformationIGBT-ModuleFD600R17KE3_B2IGBT-modulesVorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1700 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 80C, T = 150C I 600 AC vj max C nomContinuous DC col
fd600r17kf6c b2.pdf
Technische Information / Technical InformationIGBT-ModuleFD600R17KF6C_B2IGBT-modulesIHM-A Modul mit low loss IGBT2 and Emitter Controlled Diode IHM-A module with low loss IGBT2 and Emitter Controlled Diode Vorlufige DatenIGBT, Brems-Chopper / IGBT, Brake-Chopper Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannung T = 25C 1700vj
fd600r12ip4d.pdf
/ Technical InformationIGBT-FD600R12IP4DIGBT-modulesPrimePACK2 /IGBT4 NTCPrimePACK2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and NTC / Preliminary DataV = 1200VCESI = 600A / I = 1200AC nom CRM
fd600r12kf4.pdf
European Power-Semiconductor andElectronics CompanyGmbH + Co. KGMarketing InformationFD 600 R 12 KF455,211,85M8screwing depthmax. 813031,5114E1 C2C1 E2E1C1G1167M440282,5 deep 2,5 deepscrewing depth53max. 8E1 C2 (K)E1G1C1C1 E2 (A)A13/97 Mod-E/ 13.Jan 1998 G.SchulzeFD 600 R 12 KF 4Hchstzulssige Werte / Maximum rated values
fd600r16kf4.pdf
European Power-Semiconductor andElectronics CompanyMarketing InformationFD 600 R 16 KF455,211,85M8screwing depthmax. 813031,5114E1 C2C1 E2E1 E2C1 C2G1 G216 187M440 44282,5 deep2,5 deepscrewing depth53 57max. 8E1 C2 (K)E1G1C1C1 E2 (A)VWK Apr. 1997IGBT-Module FD 600 R 16 KF4Hchstzulssige Werte / Maximum rated valuesElekt
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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