FF1000R17IE4D_B2 Datasheet and Replacement
Type Designator: FF1000R17IE4D_B2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 6250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1000 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Package: MODULE
FF1000R17IE4D_B2 substitution
FF1000R17IE4D_B2 Datasheet (PDF)
ff1000r17ie4d b2.pdf
/ Technical InformationIGBT-FF1000R17IE4D_B2IGBT-modulesPrimePACK3 and NTCPrimePACK3 module and NTC / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRM Typical Applications 3 3-Level-Applications
ff1000r17ie4dp-b2.pdf
Technische Information / Technical InformationIGBT-ModulFF1000R17IE4DP_B2IGBT-ModulePrimePACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled DiodePrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diodeV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications Traktionsumrichter Traction drives Windgene
ff1000r17ie4d-b2.pdf
Technische Information / Technical InformationIGBT-ModuleFF1000R17IE4D_B2IGBT-modulesPrimePACK3 Modul und NTCPrimePACK3 module and NTCVorlufige Daten / Preliminary DataV = 1700VCESI = 1000A / I = 2000AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Hilfsumrichter Auxiliary Inverters Hochleistungsu
Datasheet: FD800R17KF6C_B2 , FD800R33KF2C , FD800R33KF2C-K , FD800R33KL2C-K_B5 , FD900R12IP4D , FD900R12IP4DV , FD-DF80R12W1H3_B52 , FF1000R17IE4 , YGW40N65F1 , FF200R06YE3 , FF200R12KE4 , FF200R12KS4 , FF200R12KT3 , FF200R12KT3_E , FF200R12KT4 , FF200R12MT4 , FF200R17KE3 .
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