FF1000R17IE4D_B2 Specs and Replacement
Type Designator: FF1000R17IE4D_B2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 6250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 1000 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: MODULE FF1000R17IE4D_B2 Substitution - IGBT ⓘ Cross-Reference Search
FF1000R17IE4D_B2 datasheet
ff1000r17ie4dp-b2.pdf
Technische Information / Technical Information IGBT-Modul FF1000R17IE4DP_B2 IGBT-Module PrimePACK 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode PrimePACK 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1000A / I = 2000A C nom CRM Typische Anwendungen Typical Applications Traktionsumrichter Traction drives Windgene... See More ⇒
ff1000r17ie4d-b2.pdf
Technische Information / Technical Information IGBT-Module FF1000R17IE4D_B2 IGBT-modules PrimePACK 3 Modul und NTC PrimePACK 3 module and NTC Vorl ufige Daten / Preliminary Data V = 1700V CES I = 1000A / I = 2000A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Hilfsumrichter Auxiliary Inverters Hochleistungsu... See More ⇒
Specs: FD800R17KF6C_B2, FD800R33KF2C, FD800R33KF2C-K, FD800R33KL2C-K_B5, FD900R12IP4D, FD900R12IP4DV, FD-DF80R12W1H3_B52, FF1000R17IE4, IKW30N60H3, FF200R06YE3, FF200R12KE4, FF200R12KS4, FF200R12KT3, FF200R12KT3_E, FF200R12KT4, FF200R12MT4, FF200R17KE3
Keywords - FF1000R17IE4D_B2 transistor spec
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History: FD900R12IP4D | FF200R12MT4
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