All IGBT. HGTP5N120CND Datasheet

 

HGTP5N120CND IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP5N120CND

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 25

Maximum Junction Temperature (Tj), °C: 150

Package: TO220AB

HGTP5N120CND Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTP5N120CND IGBT. Datasheet pdf. Equivalent

Type Designator: HGTP5N120CND

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 25

Maximum Junction Temperature (Tj), °C: 150

Package: TO220AB

HGTP5N120CND Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTP5N120CND Datasheet (PDF)

5.1. hgtg5n120bnd hgtp5n120bnd.pdf Size:195K _fairchild_semi

HGTP5N120CND HGTP5N120CND

HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes • 21A, 1200V, TC = 25oC The HGTG5N120BND and HGTP5N120BND are Non- • 1200V Switching SOA Capability Punch Through (NPT) IGBT designs. They are new • Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC members of the MOS gated high v

5.2. hgtp5n120bnd.pdf Size:28K _intersil

HGTP5N120CND HGTP5N120CND

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 File Number 4597.2 21A, 1200V, NPT Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diodes • 21A, 1200V, TC = 25oC The HGTG5N120BN, HGTP5N120BND, and • 1200V Switching SOA Capability HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT • Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 

Datasheet: HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D , HGTP3N60C3 , HGTP3N60C3D , HGTP5N120BN , HGTP5N120BND , HGTP5N120CN , IRG4PF50W , HGTP6N40E1D , HGTP6N50E1D , HGTP7N60A4 , HGTP7N60A4D , HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D .

 

 
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