FF150R12MS4G IGBT. Datasheet pdf. Equivalent
Type Designator: FF150R12MS4G
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 60 nS
Package: MODULE
FF150R12MS4G Transistor Equivalent Substitute - IGBT Cross-Reference Search
FF150R12MS4G Datasheet (PDF)
ff150r12ms4g.pdf
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ff150r12me3g.pdf
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ff150r12ks4 b2.pdf
/ Technical InformationIGBT-FF150R12KS4_B2IGBT-modules62mm C-Series IGBT62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRM Typical Applications High Frequency Switching Application
ff150r12ks4.pdf
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ff150r12kt3g.pdf
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ff150r12yt3.pdf
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ff150r12rt4.pdf
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ff150r12ke3g.pdf
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