BSM100GB120DLCK Specs and Replacement
Type Designator: BSM100GB120DLCK
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 835 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: MODULE BSM100GB120DLCK Substitution - IGBTⓘ Cross-Reference Search
BSM100GB120DLCK datasheet
bsm100gb120dlc.pdf
Technische Information / technical information IGBT-Module BSM100GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro... See More ⇒
bsm100gb120dlck.pdf
Technische Information / technical information IGBT-Module BSM100GB120DLCK IGBT-modules IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C, T = 150 C I 100 A DC-collector current T = 25 C, T = 150 C I 205 A Periodischer Kollektor Spitzen... See More ⇒
bsm100gb120dn2.pdf
BSM 100 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE... See More ⇒
bsm100gb120dn2k.pdf
BSM 100 GB 120 DN2K IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 120 DN2K 1200V 145A HALF-BRIDGE 1 C67070-A2107-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage V... See More ⇒
Specs: FF150R12ME3G, FF150R12MS4G, FF150R12RT4, FF150R12YT3, FF150R17KE4, BSM100GAL120DN2, BSM100GAR120DN2, BSM100GB120DLC, GT30F124, BSM100GB120DN2, BSM100GB120DN2K, BSM100GB170DLC, BSM100GB170DN2, BSM100GB60DLC, BSM100GD60DLC, BSM50GAL100D, BSM50GB100D
Keywords - BSM100GB120DLCK transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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