All IGBT. BSM50GD60DLC_E3226 Datasheet

 

BSM50GD60DLC_E3226 IGBT. Datasheet pdf. Equivalent

Type Designator: BSM50GD60DLC_E3226

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 250

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.45

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 9

Package: MODULE

BSM50GD60DLC_E3226 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BSM50GD60DLC_E3226 Datasheet (PDF)

1.1. bsm50gd60dlc.pdf Size:209K _igbt_a

BSM50GD60DLC_E3226
BSM50GD60DLC_E3226

 Technische Information / Technical Information IGBT-Module BSM 50 GD 60 DLC IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 80°C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC= 25°C IC 70 A Periodischer Kollektor Spitzenstrom t

1.2. bsm50gd60dlc e3226.pdf Size:85K _igbt_a

BSM50GD60DLC_E3226
BSM50GD60DLC_E3226

 Technische Information / Technical Information IGBT-Module BSM 50 GD 60 DLC E3226 IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 80°C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC= 25°C IC 70 A Periodischer Kollektor Spitzenst

 3.1. bsm50gd120dn2g.pdf Size:241K _igbt_a

BSM50GD60DLC_E3226
BSM50GD60DLC_E3226

BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 kΩ 1200 Gate

3.2. bsm50gd120dn2.pdf Size:278K _igbt_a

BSM50GD60DLC_E3226
BSM50GD60DLC_E3226

BSM 50 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 kΩ 1200 Gate-

 3.3. bsm50gd120dn2e3226.pdf Size:444K _igbt_a

BSM50GD60DLC_E3226
BSM50GD60DLC_E3226

-40...+125 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 BSM 50 GD 120 DN2 E3226 Gehäusemaße / Schaltbild Package outline / Circuit diagramm 9 2006-02-01 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit

3.4. bsm50gd120dlc.pdf Size:59K _igbt_a

BSM50GD60DLC_E3226
BSM50GD60DLC_E3226

Technische Information / Technical Information IGBT-Module BSM50GD120DLC IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 °C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC = 25 °C IC 85 A Periodischer Kollektor Spitzenstrom

 3.5. bsm50gd170dl.pdf Size:145K _igbt_a

BSM50GD60DLC_E3226
BSM50GD60DLC_E3226

European Power- Semiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 19.05 3.81 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 3.81 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally 21 13 1 5 9 2 6 10 19 17 15 3 11 7 4 8 12 20 14 01.07.1998 BSM 50 GD 170 DL vorläufige Daten H

Datasheet: BSM50GB170DN2 , BSM50GB60DLC , BSM50GD120DLC , BSM50GD120DN2 , BSM50GD120DN2E3226 , BSM50GD120DN2G , BSM50GD170DL , BSM50GD60DLC , 12N60C3D , BSM50GP120 , BSM50GP60 , SKM450GB12E4 , SKM50GAL12T4 , SKM50GB12T4 , SKM50GB12V , SKM600GA12E4 , SKM600GA12T4 .

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