SKM600GA12T4 IGBT. Datasheet pdf. Equivalent
Type Designator: SKM600GA12T4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 913 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 2320 pF
Qgⓘ - Total Gate Charge, typ: 3400 nC
Package: MODULE
SKM600GA12T4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKM600GA12T4 Datasheet (PDF)
skm600ga12t4.pdf
SKM600GA12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 913 ATj = 175 CTc =80C 702 AICnom 600 AICRM ICRM = 3xICnom 1800 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 707 ATj = 175 CSKM600GA12T4
skm600ga12e4.pdf
SKM600GA12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 913 ATj = 175 CTc =80C 702 AICnom 600 AICRM ICRM = 3xICnom 1800 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 707 ATj = 175 CSKM600GA12E4Tc =8
skm600ga12v.pdf
SKM600GA12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 908 ATj = 175 CTc =80C 692 AICnom 600 AICRM ICRM = 3xICnom 1800 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 4tpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 707 ATj = 175 CSKM600GA12VTc =80C 529 AIFnom
Datasheet: BSM50GD60DLC_E3226 , BSM50GP120 , BSM50GP60 , SKM450GB12E4 , SKM50GAL12T4 , SKM50GB12T4 , SKM50GB12V , SKM600GA12E4 , GT30G124 , SKM600GA12V , SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 .
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