SII150N06 IGBT. Datasheet pdf. Equivalent
Type Designator: SII150N06
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 595 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 180 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 28 nS
Package: MODULE
SII150N06 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SII150N06 Datasheet (PDF)
sii150n06.pdf
SII150N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 180(150) TC= 25(60)oC AICRM 300 TC= 60oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 595 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 150 AIFRM300 tP =1ms A2VR
sii150n12.pdf
SII150N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 210(150) TC= 25(80)oC AICRM 420(300) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 1250 W_o_TVj,(Tstg) TOPERATION
psii15-12.pdf
ECO-PACTM 2IGBT Module PSII 15/12* IC25 = 18 APreliminary Data Sheet VCES = 1200 VVCE(sat)typ.= 2.3 VS9X18L9 N9N5 R5W14A5 D5H5A1C1 K10F3G1PSII 15/12*K13 K12IGBTs*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 1200 VVGES 20 VIC25 TC = 25C 18 AIC80 TC = 80C 14 AICM VGE = 15 V; RG = 82 ; TVJ = 125C 20 AVCEK R
Datasheet: SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , SKM600GB066D , SKM600GB126D , SII100N06 , SII100N12 , IRG7R313U , SII150N12 , SII200N06 , SII200N12 , SII300N06 , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C .
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