SII300N06 IGBT. Datasheet pdf. Equivalent
Type Designator: SII300N06
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 375 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 69 nS
Package: MODULE
SII300N06 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SII300N06 Datasheet (PDF)
sii300n06.pdf
SII300N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 275(300) TC= 25(65)oC AICRM 600 TC= 65oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 1250 W_VGES +20VDiode Wechselrichter/ Diode Inverter IF 300 AIFRM600 tP =1ms A2V
psii30-06.pdf
IGBT Module IC80 = 29 APSII 30/06*VCES = 600 VShort Circuit SOA CapabilitySquare RBSOA VCE(sat)typ. = 2.4 VPreliminary Data SheetECO-TOPTM 1S15R15A15 G15N15A7 V12V9A9 V13 V10D1K1 Q1A1G1 N1U1typical picture, for pinV1V3 V6 configuration see outlinedrawingIGBTs*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 600 VVG
psii30-12.pdf
ECO-TOPTM 1IGBT Module IC80 = 33 APSII 30/12*VCES = 1200 VShort Circuit SOA CapabilitySquare RBSOA VCE(sat)typ. = 3.1 VPreliminary Data SheetS15ECO-TOPTM 1R15A15 G15N15A7 V12V9A9 V13V10D1K1 Q1A1G1 N1U1typical picture, for pinV1V3 V6 configuration see outlinedrawingIGBTs*NTC optionalSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150
Datasheet: SKM600GB066D , SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 , SII200N06 , SII200N12 , TGAN60N60F2DS , SII50N06 , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 , MMIX1X200N60B3H1 .
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