All IGBT. FGA60N65SMD Datasheet

 

FGA60N65SMD IGBT. Datasheet pdf. Equivalent


   Type Designator: FGA60N65SMD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 47 nS
   Coesⓘ - Output Capacitance, typ: 270 pF
   Qgⓘ - Total Gate Charge, typ: 189 nC
   Package: TO-3PN

 FGA60N65SMD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGA60N65SMD Datasheet (PDF)

Datasheet: IRGC100B60KB , IRGC100B60UB , IRGC15B120KB , IRGC15B120UB , IRGC16B120KB , IRGC16B60KB , GT50JR22 , RJP30H2A , MGD623S , FGA6065ADF , FGA6560WDF , FGH30S130P , GT40WR21 , FGM603 , FGT312 , FGT313 , FGT412 .

 

 
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