STGW38IH120D Datasheet and Replacement

STGW38IH120D30 A - 1200 V - very fast IGBTPreliminary DataFeatures Low saturation voltage High current capability Low switching loss Very soft ultra fast recovery antiparallel diode32Applications1TO-247 long leads Induction cooking, microwave oven Soft switching application DescriptionThis IGBT utilizes the advanced PowerMESH process result

STGW38IH130D, STGWT38IH130D33 A - 1300 V - very fast IGBTDatasheet - production dataFeatures Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop free-3wheeling diode 3221 1Applications Induction cooking, microwave ovensTO-247TO-3P Soft-switching applicationsDescriptionFigure 1. Inter

STGW38IH130D33 A - 1300 V - very fast IGBTFeatures Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop free-wheeling diode321ApplicationsTO-247 Induction cooking, microwave oven Soft switching application DescriptionThis IGBT utilizes the advanced PowerMESH Figure 1. Internal schematic

STGW35HF60WD35 A, 600 V ultra fast IGBTFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode 321ApplicationsTO-247 Welding High frequency converters Power factor correctionDescriptionFigure 1. Internal schemati

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

STGW35NC120HD32 A, 1200 V very fast IGBTDatasheet - production dataFeatures Low on-losses Low on-voltage drop (VCE(sat)) High current capability IGBT co-packaged with ultrafast free-wheeling diode3 Low gate charge21 Ideal for soft switching applicationTO-247 long leadsApplication Induction heatingFigure 1. Internal schematic diagram

STGW30NB60HDN-CHANNEL 30A - 600V - TO-247PowerMESH IGBTTYPE VCES VCE(sat) (Max) ICSTGW30NB60HD 600 V

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

STGW30NB60HN-CHANNEL 30A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW30NB60H 600 V

STGW30N120KDSTGWA30N120KD30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTrench gate field-stop IGBT, HB series 650 V, 30 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 30 ATO-3PF Tight parameters distribution111 Safe paralleling3 Low t

STGFW30H65FB, STGW30H65FBDatasheetTrench gate field-stop 650 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current111 VCE(sat) = 1.55 V (typ.) at IC = 30 A32 31 21 Tight parameters distributionTO-247TO-3PF Safe paralleling Low thermal resistanceApplicati

STGW30NC60VD40 A, 600 V, very fast IGBT with Ultrafast diodeFeatures High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diodeApplications32 High frequency inverters, UPS1 Motor driveTO-247 long leads SMPS and PFC in both hard switch and resonant topologiesDescriptionFigure 1. Internal schemat

STGW30NC120HDN-channel 1200V - 30A - TO-247very fast PowerMESH IGBTFeaturesICVCE(sat) Type VCES@25C @100CSTGW30NC120HD 1200V

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

STGW39NC60VD40 A - 600 V - very fast IGBTFeatures Low CRES / CIES ratio (no cross conduction susceptibility) IGBT co-packaged with ultra fast free-wheeling diode3Applications21 High frequency invertersTO-247 UPS Motor drivers Induction heatingDescriptionFigure 1. Internal schematic diagramThis IGBT utilizes the advanced PowerMESH proces

STGW35HF60WDI35 A, 600 V ultrafast IGBT with low drop diodeFeatures Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Low VF soft recovery antiparallel diode Applications321 WeldingTO-247 Induction heating Resonant convertersDescriptionThis ultrafast IGBT is developed using a new Figure 1. Interna

STGW30NC60KD30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode321ApplicationsTO-247 High frequency inverters Motor driversDescriptionFigure 1. Internal schematic diagra

STGW30H60DFB, STGWT30H60DFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A3322 Tight parameters distribution11TO-247 Safe parallelingTO-3P Low thermal resist

STGW30NC60WD30 A, 600 V ultra fast IGBTFeatures High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications321 High frequency motor controls, inverters, UPSTO-247 HF, SMPS and PFC in both hard switch and resonant topologiesDescriptionThis IGBT utilizes the advan

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

STGW30N90D30 A, 900 V very fast IGBTFeatures Low on-losses Low on-voltage drop (VCE(sat)) High current capability Low gate charge Ideal for soft switching application321ApplicationTO-247 Induction heatingDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagrambet

STGB30H60DLFB, STGW30H60DLFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Designed for soft commutation only Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current313 VCE(sat) = 1.55 V (typ.) @ IC = 30 A2D2PAK 1 Low VF soft recovery co-packaged diodeT

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para

STGFW30V60F, STGW30V60F, STGWT30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A21TO-3PF Tight parameters distributionTab Safe paralleling Low thermal resistance3 322App

STGW35NB60SDN-CHANNEL 35A - 600V - TO-247Low Drop PowerMESH IGBTGeneral featuresVCE(sat) IC VCESType(Max)@ 25C @100CSTGW35NB60SD 600V

STGW35NB60SN-channel 35A - 600V - TO-247Low drop PowerMESH IGBTFeaturesVCE(sat) IC Type VCES(Max)@ 25C @100CSTGW35NB60S 600V

STGF35HF60W, STGW35HF60W,STGFW35HF60W35 A, 600 V Ultrafast IGBTDatasheet - production dataFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction losses332211ApplicationsTO-247TO-220FP Welding High frequency converters111 Power factor correction321DescriptionTO-3PFThis Ultrafast IGBT is develope

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery