All IGBT. 1MBI200F-120 Datasheet

 

1MBI200F-120 IGBT. Datasheet pdf. Equivalent


   Type Designator: 1MBI200F-120
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1440 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 600 nS
   Package: MODULE

 1MBI200F-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

1MBI200F-120 Datasheet (PDF)

Datasheet: 1MBI1200U4C-120 , 1MBI1200U4C-170 , 1MBI1200UE-330 , 1MBI1500UE-330-02 , 1MBI150NH-060 , 1MBI150NK-060 , 1MBI1600U4C-120 , 1MBI1600U4C-170 , RJP30H1DPD , 1MBI200HH-120L-50 , 1MBI200L-120 , 1MBI200NK-060 , 1MBI200S-120 , 1MBI200SA-120 , 1MBI200U4H-120L-50 , 1MBI2400U4D-120 , 1MBI2400U4D-170 .

 

 
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