1MBI200S-120 Datasheet and Replacement
Type Designator: 1MBI200S-120
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Coesⓘ - Output Capacitance, typ: 5000 pF
Package: MODULE
- IGBT Cross-Reference
1MBI200S-120 Datasheet (PDF)
1mbi200s-120.pdf

. ./ 8(017)200-56-46 www.fotorele.net e:mail minsk17@tut.by1-Pack IGBT1200V1MBI 200S-1201x200AIGBT MODULE ( S-Series ) Outline Drawing Features NPT-Technology Square SC SOA at 10 x IC High Short Circuit Withstand-Capability Small Temperature Depe
1mbi200u4h-120l-50.pdf

http://www.fujielectric.com/products/semiconductor/1MBI200U4H-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 200A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratin
1mbi200n-120.pdf

IGBT Module1MBI200N-1201200V / 200A 1 in one-packageFeatures High speed switching Voltage drive Low inductance module structureApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Industrial machines, such as Welding machinesMaximum ratings and characteristicsAbsolute maximum ratings (at Tc=25C unless otherw
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: AP50G60SW
Keywords - 1MBI200S-120 transistor datasheet
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History: AP50G60SW



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