All IGBT. IRG4BC20F Datasheet

 

IRG4BC20F IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4BC20F

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Maximum Collector Current |Ic|, A: 9A

Maximum Junction Temperature (Tj), °C: 175

Package: TO220AB

IRG4BC20F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4BC20F Datasheet (PDF)

1.1. irg4bc20fd-s.pdf Size:222K _international_rectifier

IRG4BC20F
IRG4BC20F

PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.66V Generation 4 IGBT design provides tighter G parameter distribution and higher e

1.2. irg4bc20fd.pdf Size:222K _international_rectifier

IRG4BC20F
IRG4BC20F

PD 91601A I Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.66V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, I

1.3. irg4bc20f.pdf Size:161K _international_rectifier

IRG4BC20F
IRG4BC20F

D I I T I T D T I T I T Features C Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V

1.4. irg4bc20fd-s.pdf Size:290K _igbt_a

IRG4BC20F
IRG4BC20F

PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating C frequencies ( 1-5 kHz in hard switching, >20 VCES = 600V kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.66V G Generation 3

1.5. irg4bc20fd.pdf Size:313K _igbt_a

IRG4BC20F
IRG4BC20F

 IRG4BC20FDPbF Fast CoPack IGBT Features C = G

1.6. irg4bc20f.pdf Size:163K _igbt_a

IRG4BC20F
IRG4BC20F

 D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.66V G parameter distribution and higher efficiency than Generation 3 @VG

Datasheet: HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRG4BC10S , IRG4BC10SD , IRG4BC10UD , FII50-12E , IRG4BC20FD , IRG4BC20K , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S .

 


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