1MBI400NA-120 IGBT. Datasheet pdf. Equivalent

   Type Designator: 1MBI400NA-120
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 3100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 250 nS
   Coesⓘ - Output Capacitance, typ: 23200 pF
   Package: MODULE

1MBI400NA-120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

1MBI400NA-120 Datasheet (PDF)

..1. Size:190K fuji
1mbi400na-120.pdf

IGBT MODULE ( N series ) n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (4~5 Times Rated Current)n Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power

6.1. Size:95K fuji
1mbi400n-120.pdf

6.2. Size:63K fuji
1mbi400nn-120.pdf

1MBI400NP-120IGBT Module1MBI400NN-1201200V / 400A 1 in one-packageFeatures High speed switching Voltage drive Low inductance module structureApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Industrial machines, such as Welding machinesMaximum ratings and characteristicsAbsolute maximum ratings (at Tc=25

6.3. Size:63K fuji
1mbi400np-120.pdf