1MBI50L-060 Specs and Replacement
Type Designator: 1MBI50L-060
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Package: MODULE 1MBI50L-060 Substitution - IGBT ⓘ Cross-Reference Search
1MBI50L-060 datasheet
1mbi50fe-060.pdf
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1mbi50u4f-120l-50.pdf
http //www.fujielectric.com/products/semiconductor/ 1MBI50U4F-120L-50 IGBT Modules IGBT MODULE (U series) 1200V / 50A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings... See More ⇒
Specs: 1MBI400N-120 , 1MBI400NA-120 , 1MBI400NN-120 , 1MBI400NP-120 , 1MBI400S-120 , 1MBI400U4-120 , 1MBI400V-120-50 , 1MBI50FE-060 , CRG15T120BNR3S , 1MBI600LN-060 , 1MBI600LP-060 , 1MBI600NN-060 , 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 .
History: 2MBI100NB-120
Keywords - 1MBI50L-060 transistor spec
1MBI50L-060 cross reference
1MBI50L-060 equivalent finder
1MBI50L-060 lookup
1MBI50L-060 substitution
1MBI50L-060 replacement
History: 2MBI100NB-120
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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