All IGBT. 1MBI50L-060 Datasheet

 

1MBI50L-060 Datasheet and Replacement


   Type Designator: 1MBI50L-060
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: MODULE
 

 1MBI50L-060 substitution

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1MBI50L-060 Datasheet (PDF)

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1MBI50L-060

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1MBI50L-060

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 1mbi50u4f-120l-50.pdf pdf_icon

1MBI50L-060

http://www.fujielectric.com/products/semiconductor/1MBI50U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 50A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings

Datasheet: 1MBI400N-120 , 1MBI400NA-120 , 1MBI400NN-120 , 1MBI400NP-120 , 1MBI400S-120 , 1MBI400U4-120 , 1MBI400V-120-50 , 1MBI50FE-060 , SGH80N60UFD , 1MBI600LN-060 , 1MBI600LP-060 , 1MBI600NN-060 , 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 .

Keywords - 1MBI50L-060 transistor datasheet

 1MBI50L-060 cross reference
 1MBI50L-060 equivalent finder
 1MBI50L-060 lookup
 1MBI50L-060 substitution
 1MBI50L-060 replacement

 

 
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