HCKW75N65FH2 Datasheet and Replacement
Type Designator: HCKW75N65FH2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 132 nS
Coesⓘ - Output Capacitance, typ: 268 pF
Package: TO247
- IGBT Cross-Reference
HCKW75N65FH2 Datasheet (PDF)
hckw75n65fh2.pdf

HCKW75N65FH2@Trench-FS Cool-Watt IGBTHCKW75N65FH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
hckw75n65gh2.pdf

HCKW75N65GH2@Trench-FS Cool-Watt IGBTHCKW75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo
hckw75n65bh2.pdf

HCKW75N65BH2@Trench-FS Cool-Watt IGBTHCKW75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
Datasheet: 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , HCKW40N65H2 , HCKW60N65BH2A , HCKW60N65CH2A , HCKW75N65BH2 , GT30F131 , 2N6975 , 2N6976 , 2N6977 , 2N6978 , 2PG352 , 2PG401 , 2PG402 , 2SH11 .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - HCKW75N65FH2 transistor datasheet
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History: MG25Q6ES51 | 7MBR75U2B060



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