IRG4BC20U Datasheet. Specs and Replacement

Type Designator: IRG4BC20U  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 13 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 39 pF

Package: TO220AB

 IRG4BC20U Substitution

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IRG4BC20U datasheet

 ..1. Size:173K  international rectifier
 irg4bc20u.pdf pdf_icon

IRG4BC20U

D D I I T I T D T I T I T Features Features Features Features Features C UltraFast optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.85V G parameter distribution and higher efficiency than Generatio... See More ⇒

 0.1. Size:371K  international rectifier
 irg4bc20udpbf.pdf pdf_icon

IRG4BC20U

PD - 94909A IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST UltraFast CoPack IGBT SOFT RECOVERY DIODE Features C UltraFast optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.85V parameter distribution and higher efficiency than G Generati... See More ⇒

 0.2. Size:238K  international rectifier
 irg4bc20ud.pdf pdf_icon

IRG4BC20U

PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating frequencies VCES = 600V 8-40 kHz in hard switching, >200kHz in resonant mode VCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para- G meter distribution and higher efficiency than Generation 3... See More ⇒

 0.3. Size:240K  international rectifier
 irg4bc20ud-s.pdf pdf_icon

IRG4BC20U

PD- 94077 IRG4BC20UD-S UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating frequencies VCES = 600V 8-40 kHz in hard switching, >200kHz in resonant mode VCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para- G meter distribution... See More ⇒

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Specs: IRG4BC20FD, IRG4BC20K, IRG4BC20KD, IRG4BC20KD-S, IRG4BC20K-S, IRG4BC20S, IRG4BC20SD, IRG4BC20SD-S, FGH30S130P, IRG4BC20UD, IRG4BC20W, IRG4BC30F, IRG4BC30FD, IRG4BC30K, IRG4BC30KD, IRG4BC30KD-S, IRG4BC30K-S

Keywords - IRG4BC20U transistor spec

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