2MBI300VH-120-50 PDF and Equivalents Search

 

2MBI300VH-120-50 Specs and Replacement

Type Designator: 2MBI300VH-120-50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 360 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 200 nS

Package: MODULE

 2MBI300VH-120-50 Substitution

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2MBI300VH-120-50 datasheet

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2MBI300VH-120-50

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2MBI300VH-120-50

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2MBI300VH-120-50

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Specs: 2MBI300U4E-120 , 2MBI300U4H-120 , 2MBI300U4N-170-50 , 2MBI300UC-120 , 2MBI300UE-120 , 2MBI300VB-060-50 , 2MBI300VD-120-50 , 2MBI300VE-120-50 , IHW20N135R5 , 2MBI300VJ-120-50 , 2MBI300VN-120-50 , 2MBI300VN-170-50 , 2MBI400L-060 , 2MBI400N-060-01 , 2MBI400TB-060 , 2MBI400U2B-060 , 2MBI400U4H-120 .

History: 2MBI200N-120

Keywords - 2MBI300VH-120-50 transistor spec

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