2MBI50L-060 Datasheet. Specs and Replacement

Type Designator: 2MBI50L-060  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: MODULE

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2MBI50L-060 datasheet

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Specs: 2MBI450U4N-170-50, 2MBI450VE-120-50, 2MBI450VH-120-50, 2MBI450VJ-120-50, 2MBI450VN-120-50, 2MBI450VN-170-50, 2MBI50F-120, 2MBI50J-060, IRGP4066D, 2MBI50L-120, 2MBI50N-060, 2MBI50N-120, 2MBI550VJ-170-50, 2MBI550VN-170-50, 2MBI600NT-060, 2MBI600U2E-060, 2MBI600U4G-120

Keywords - 2MBI50L-060 transistor spec

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