2MBI50L-060 Datasheet and Replacement
Type Designator: 2MBI50L-060
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: MODULE
2MBI50L-060 substitution
2MBI50L-060 Datasheet (PDF)
2mbi50j-060.pdf

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Datasheet: 2MBI450U4N-170-50 , 2MBI450VE-120-50 , 2MBI450VH-120-50 , 2MBI450VJ-120-50 , 2MBI450VN-120-50 , 2MBI450VN-170-50 , 2MBI50F-120 , 2MBI50J-060 , TGAN20N135FD , 2MBI50L-120 , 2MBI50N-060 , 2MBI50N-120 , 2MBI550VJ-170-50 , 2MBI550VN-170-50 , 2MBI600NT-060 , 2MBI600U2E-060 , 2MBI600U4G-120 .
History: MUBW45-12T6K
Keywords - 2MBI50L-060 transistor datasheet
2MBI50L-060 cross reference
2MBI50L-060 equivalent finder
2MBI50L-060 lookup
2MBI50L-060 substitution
2MBI50L-060 replacement
History: MUBW45-12T6K



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