2MBI50L-060 PDF and Equivalents Search

 

2MBI50L-060 PDF Specs and Replacement


   Type Designator: 2MBI50L-060
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: MODULE
 

 2MBI50L-060 Substitution

   - IGBT ⓘ Cross-Reference Search

 

2MBI50L-060 PDF specs

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Specs: 2MBI450U4N-170-50 , 2MBI450VE-120-50 , 2MBI450VH-120-50 , 2MBI450VJ-120-50 , 2MBI450VN-120-50 , 2MBI450VN-170-50 , 2MBI50F-120 , 2MBI50J-060 , FGH75T65UPD , 2MBI50L-120 , 2MBI50N-060 , 2MBI50N-120 , 2MBI550VJ-170-50 , 2MBI550VN-170-50 , 2MBI600NT-060 , 2MBI600U2E-060 , 2MBI600U4G-120 .

History: 2MBI400VD-120-50

Keywords - 2MBI50L-060 transistor spec

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