2MBI50L-120 PDF and Equivalents Search

 

2MBI50L-120 Specs and Replacement

Type Designator: 2MBI50L-120

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 400 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: MODULE

 2MBI50L-120 Substitution

- IGBT ⓘ Cross-Reference Search

 

2MBI50L-120 datasheet

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 2mbi50l-120.pdf pdf_icon

2MBI50L-120

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 2mbi50l-060.pdf pdf_icon

2MBI50L-120

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 2mbi50j-060.pdf pdf_icon

2MBI50L-120

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 2mbi50f-120.pdf pdf_icon

2MBI50L-120

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Specs: 2MBI450VE-120-50 , 2MBI450VH-120-50 , 2MBI450VJ-120-50 , 2MBI450VN-120-50 , 2MBI450VN-170-50 , 2MBI50F-120 , 2MBI50J-060 , 2MBI50L-060 , GT30F133 , 2MBI50N-060 , 2MBI50N-120 , 2MBI550VJ-170-50 , 2MBI550VN-170-50 , 2MBI600NT-060 , 2MBI600U2E-060 , 2MBI600U4G-120 , 2MBI600U4G-170 .

Keywords - 2MBI50L-120 transistor spec

 2MBI50L-120 cross reference
 2MBI50L-120 equivalent finder
 2MBI50L-120 lookup
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