All IGBT. 2MBI50L-120 Datasheet

 

2MBI50L-120 Datasheet and Replacement


   Type Designator: 2MBI50L-120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: MODULE
 

 2MBI50L-120 substitution

   - IGBT ⓘ Cross-Reference Search

 

2MBI50L-120 Datasheet (PDF)

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2MBI50L-120

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 2mbi50l-060.pdf pdf_icon

2MBI50L-120

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 2mbi50j-060.pdf pdf_icon

2MBI50L-120

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 2mbi50f-120.pdf pdf_icon

2MBI50L-120

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Datasheet: 2MBI450VE-120-50 , 2MBI450VH-120-50 , 2MBI450VJ-120-50 , 2MBI450VN-120-50 , 2MBI450VN-170-50 , 2MBI50F-120 , 2MBI50J-060 , 2MBI50L-060 , CRG75T60AK3HD , 2MBI50N-060 , 2MBI50N-120 , 2MBI550VJ-170-50 , 2MBI550VN-170-50 , 2MBI600NT-060 , 2MBI600U2E-060 , 2MBI600U4G-120 , 2MBI600U4G-170 .

History: FGY40T120SMD

Keywords - 2MBI50L-120 transistor datasheet

 2MBI50L-120 cross reference
 2MBI50L-120 equivalent finder
 2MBI50L-120 lookup
 2MBI50L-120 substitution
 2MBI50L-120 replacement

 

 
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