2MBI50L-120 Datasheet and Replacement
Type Designator: 2MBI50L-120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
- IGBT Cross-Reference
2MBI50L-120 Datasheet (PDF)
2mbi50j-060.pdf

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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: 2MBI200U2A-060 | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | 2MBI450VH-120-50 | MSG15T65FL | CRG15T120BK3SD
Keywords - 2MBI50L-120 transistor datasheet
2MBI50L-120 cross reference
2MBI50L-120 equivalent finder
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History: 2MBI200U2A-060 | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | 2MBI450VH-120-50 | MSG15T65FL | CRG15T120BK3SD



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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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