2MBI600U4G-170 IGBT. Datasheet pdf. Equivalent
Type Designator: 2MBI600U4G-170
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 3670 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 800 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.43 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 1250 nS
Package: MODULE
2MBI600U4G-170 Transistor Equivalent Substitute - IGBT Cross-Reference Search
2MBI600U4G-170 Datasheet (PDF)
2mbi600u4g-170.pdf
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2mbi600vn-120-50.pdf
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2mbi600vj-120-50.pdf
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