BM63364S-VA IGBT. Datasheet pdf. Equivalent
Type Designator: BM63364S-VA
Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 41 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: MODULE
BM63364S-VA Transistor Equivalent Substitute - IGBT Cross-Reference Search
BM63364S-VA Datasheet (PDF)
bm63364s-va bm63364s-vc.pdf
DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for low speed switching drive BM63364S-VA BM63364S-VC General Description Key Specifications BM63364S-VA/-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.5V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Low
bm63363s-va bm63363s-vc.pdf
DatasheetInverter for motor control 600V IGBT Intelligent Power Module (IPM) for low speed switching drive BM63363S-VA BM63363S-VC General Description Key Specifications BM63363S-VA/-VC is an Intelligent Power Module IGBT Collector-Emitter Voltage VCESAT: 1.5V(Typ) composed of gate drivers, bootstrap diodes, IGBTs, fly FWD Forward Voltage VF: 1.5V(Typ) wheel diodes. Low
Datasheet: 7MBR75VB060-50 , 7MBR75VB120-50 , 7MBR75VN120-50 , 7MBR75VP060-50 , 7MBR75VR120-50 , 7MBR75VX120-50 , BM63363S-VA , BM63363S-VC , TGAN60N60F2DS , BM63364S-VC , BM63763S-VA , BM63763S-VC , BM63764S-VA , BM63764S-VC , BSM10GD120DN2 , BSM10GD120DN2_E3224 , BSM10GP120 .
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