All IGBT. CM1200HC-34H Datasheet

 

CM1200HC-34H IGBT. Datasheet pdf. Equivalent


   Type Designator: CM1200HC-34H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 10400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1300 nS
   Coesⓘ - Output Capacitance, typ: 16700 pF
   Qgⓘ - Total Gate Charge, typ: 11000 nC
   Package: MODULE

 CM1200HC-34H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CM1200HC-34H Datasheet (PDF)

 ..1. Size:179K  1
 cm1200hc-34h.pdf

CM1200HC-34H CM1200HC-34H

MITSUBISHI HVIGBT MODULESCM1200HC-34HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-34H IC ................................................................ 1200A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recover

 5.1. Size:71K  1
 cm1200hc-50h.pdf

CM1200HC-34H CM1200HC-34H

MITSUBISHI HVIGBT MODULESCM1200HC-50HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-50H IC ................................................................ 1200A VCES ....................................................... 2500V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 5.2. Size:183K  1
 cm1200hc-66h.pdf

CM1200HC-34H CM1200HC-34H

MITSUBISHI HVIGBT MODULESCM1200HC-66HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM1200HC-66H IC ................................................................ 1200A VCES ....................................................... 3300V Insulated Type 1-element in a Pack AISiC BaseplateAPPLICATIONTraction

 6.1. Size:446K  1
 cm1200hcb-34n.pdf

CM1200HC-34H CM1200HC-34H

CM1200HCB-34N HIGH POWER SWITHCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM2400HCB-34N IC 1200 A VCES

Datasheet: CM1200DB-34N , CM1200DC-34N , CM1200E4C-34N , CM1200HA-34H , CM1200HA-50H , CM1200HA-66H , CM1200HB-50H , CM1200HB-66H , SGT50T65FD1PN , CM1200HC-50H , CM1200HC-66H , CM1200HCB-34N , CM1200HG-66H , CM1400DU-24NF , CM1400DUC-24S , CM150DU-12F , CM150DU-12H .

 

 
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