IRG4PC40W IGBT. Datasheet pdf. Equivalent
Type Designator: IRG4PC40W
Type of IGBT Channel: N-Channel
Maximum Power Dissipation (Pc), W: 160W
Maximum Collector-Emitter Voltage |Vce|, V: 600V
Maximum Collector Current |Ic|, A: 20A
Maximum Junction Temperature (Tj), °C: 175
Package: TO247AC
IRG4PC40W Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4PC40W Datasheet (PDF)
1.1. irg4pc40w.pdf 
Size:116K _international_rectifier
PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E Low IGBT conduction losses n-channel
1.2. irg4pc40w.pdf Size:119K _igbt_a
PD -91656C IRG4PC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E • Low IGBT conduction losses
2.1. irg4pc40s.pdf Size:143K _international_rectifier
D I I T I T D T I T I T Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 Industry standard TO-2
2.2. irg4pc40u.pdf Size:148K _international_rectifier
D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3 @VGE =
2.3. irg4pc40kd.pdf Size:182K _international_rectifier
PD -91584A IRG4PC40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides tig
2.4. irg4pc40fd.pdf Size:214K _international_rectifier
PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V Generation 4 IGBT design provides tighter G parameter distribution and higher effi
2.5. irg4pc40k.pdf Size:119K _international_rectifier
D . IRG4PC40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiency G than Generation
2.6. irg4pc40ud.pdf Size:245K _international_rectifier
PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V Generation 4 IGBT design provides tighter G parameter distribution and high
2.7. irg4pc40f.pdf Size:145K _international_rectifier
D I I T I T D T I T I T Features C Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,
2.8. irg4pc40s.pdf Size:148K _igbt_a
D I I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 • Industry stan
2.9. irg4pc40u.pdf Size:153K _igbt_a
D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3
2.10. irg4pc40kd.pdf Size:188K _igbt_a
PD -91584A IRG4PC40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design pro
2.11. auirg4pc40s-e.pdf Size:408K _igbt_a
AUTOMOTIVE GRADE AUIRG4PC40S-E Insulated Gate Bipolar Transistor C VCES = 600V Features VCE(ON) typ. = 1.32V G Standard: Optimized for minimum saturation voltage E and low operating frequencies ( < 1kHz) @ VGE = 15V, IC = 31A n-channel Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry
2.12. irg4pc40fd.pdf Size:224K _igbt_a
PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V • Generation 4 IGBT design provides tighter G parameter distribution and high
2.13. irg4pc40k.pdf Size:125K _igbt_a
D . IRG4PC40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features • Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.1V • Generation 4 IGBT design provides higher efficiency G than Ge
2.14. irg4pc40ud.pdf Size:238K _igbt_a
PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V • Generation 4 IGBT design provides tighter G parameter distribution a
2.15. irg4pc40f.pdf Size:150K _igbt_a
D I I T I T D T I T I T Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE
Datasheet: IRG4PC30W , IRG4PC40F , IRG4PC40FD , IRG4PC40K , IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , RJH60F5DPK , IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W .
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