CM600HN-5F IGBT. Datasheet pdf. Equivalent
Type Designator: CM600HN-5F
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1780 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 4000 nS
Coesⓘ - Output Capacitance, typ: 7500 pF
Qgⓘ - Total Gate Charge, typ: 2200 nC
Package: MODULE
CM600HN-5F Transistor Equivalent Substitute - IGBT Cross-Reference Search
CM600HN-5F Datasheet (PDF)
cm600hn-5f.pdf
MITSUBISHI IGBT MODULESCM600HN-5FHIGH POWER SWITCHING USEINSULATED TYPECM600HN-5F IC...................................................................600A VCES ..........................................................250V Insulated Type 1-element in a pack UL RecognizedYellow Card No. E80276File No. E80271APPLICATIONUPS, ForkliftOUTLINE DRAWING & CIR
cm600hg-130h.pdf
MITSUBISHI HVIGBT MODULESCM600HG-130HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-130H IC ..................................................................600 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate
cm600hu-12f.pdf
CM600HU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/600 VoltsM (2 TYP.)N (2 TYP)ADGCEFPGECMCLEBDescription:H J K RPowerex IGBTMOD ModulesTC MEASURINGare designed for use in switchingL (4 TYP)POINTapplications. Each module consistsof one IGBT Trans
cm600hb-90h.pdf
CM600HB-90HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Single IGBTMODHVIGBT600 Amperes/4500 VoltsADV NUTSLL(4 TYP)NSYC CP GFE BE ECMQDescription:CE GPowerex IGBTMOD ModulesRare designed for use in switchingapplications. Each module consistsU NUTSof one IGBT Transistor with a (3 TYP) HTW re
cm600hg-90h.pdf
MITSUBISHI HVIGBT MODULESCM600HG-90HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-90H IC ..................................................................600 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC BaseplateAP
cm600ha-5f.pdf
CM600HA-5FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/250 VoltsH G F E DJW - DIA. (4 TYP.)KyQPEM LNE CxGCDescription:BPowerex IGBTMOD ModulesA Rare designed for use in switchingapplications. Each module consistsU - THD.V -THD. of one IGBT Transistor in a s
Datasheet: CM600DY-24A , CM600DY-24S , CM600DY-34H , CM600E2Y-34H , CM600HA-5F , CM600HB-90H , CM600HG-130H , CM600HG-90H , IRG4PC50UD , CM600HU-12F , CM75DU-12F , CM75DU-24F , CM75MXA-24S , CM75MXA-34SA , CM75RL-12NF , CM75RL-24NF , CM75RX-24S .
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