CM600HN-5F Datasheet and Replacement

MITSUBISHI IGBT MODULESCM600HN-5FHIGH POWER SWITCHING USEINSULATED TYPECM600HN-5F IC...................................................................600A VCES ..........................................................250V Insulated Type 1-element in a pack UL RecognizedYellow Card No. E80276File No. E80271APPLICATIONUPS, ForkliftOUTLINE DRAWING & CIR

MITSUBISHI HVIGBT MODULESCM600HG-130HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-130H IC ..................................................................600 A VCES ...................................................... 6500 V High Insulated Type 1-element in a Pack AISiC Baseplate

CM600HU-12FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/600 VoltsM (2 TYP.)N (2 TYP)ADGCEFPGECMCLEBDescription:H J K RPowerex IGBTMOD ModulesTC MEASURINGare designed for use in switchingL (4 TYP)POINTapplications. Each module consistsof one IGBT Trans

CM600HB-90HPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Single IGBTMODHVIGBT600 Amperes/4500 VoltsADV NUTSLL(4 TYP)NSYC CP GFE BE ECMQDescription:CE GPowerex IGBTMOD ModulesRare designed for use in switchingapplications. Each module consistsU NUTSof one IGBT Transistor with a (3 TYP) HTW re

MITSUBISHI HVIGBT MODULESCM600HG-90HHIGH POWER SWITCHING USE3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesINSULATED TYPECM600HG-90H IC ..................................................................600 A VCES ...................................................... 4500 V High Insulated Type 1-element in a Pack AISiC BaseplateAP

CM600HA-5FPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Trench Gate DesignSingle IGBTMOD600 Amperes/250 VoltsH G F E DJW - DIA. (4 TYP.)KyQPEM LNE CxGCDescription:BPowerex IGBTMOD ModulesA Rare designed for use in switchingapplications. Each module consistsU - THD.V -THD. of one IGBT Transistor in a s