IRG4PC50UD Specs and Replacement

Type Designator: IRG4PC50UD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 55 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 25 nS

Coesⓘ - Output Capacitance, typ: 250 pF

Package: TO247AC

 IRG4PC50UD Substitution

- IGBTⓘ Cross-Reference Search

 

IRG4PC50UD datasheet

 ..1. Size:219K  international rectifier
 irg4pc50ud.pdf pdf_icon

IRG4PC50UD

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution an... See More ⇒

 0.1. Size:687K  international rectifier
 irg4pc50udpbf.pdf pdf_icon

IRG4PC50UD

PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V parameter distribution and higher efficiency than G Generation... See More ⇒

 5.1. Size:153K  international rectifier
 irg4pc50u.pdf pdf_icon

IRG4PC50UD

D I I T I T D T I T I T Features C Features Features Features Features UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3... See More ⇒

 5.2. Size:635K  international rectifier
 irg4pc50upbf.pdf pdf_icon

IRG4PC50UD

PD -95186 IRG4PC50UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Industr... See More ⇒

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Specs: IRG4PC40UD, IRG4PC40W, IRG4PC50F, IRG4PC50FD, IRG4PC50K, IRG4PC50KD, IRG4PC50S, IRG4PC50U, SGT50T65FD1PN, IRG4PC50W, IRG4PF50W, IRG4PF50WD, IRG4PH20K, IRG4PH20KD, IRG4PH30K, IRG4PH30KD, IRG4PH40K

Keywords - IRG4PC50UD transistor spec

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