IRG4PC50UD
IGBT. Datasheet pdf. Equivalent
Type Designator: IRG4PC50UD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 200
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 55
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.65
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 25
nS
Coesⓘ - Output Capacitance, typ: 250
pF
Qgⓘ -
Total Gate Charge, typ: 180
nC
Package:
TO247AC
IRG4PC50UD
Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4PC50UD
Datasheet (PDF)
..1. Size:219K international rectifier
irg4pc50ud.pdf 
PD 91471BIRG4PC50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.65V Generation 4 IGBT design provides tighterG parameter distribution an
0.1. Size:687K infineon
irg4pc50udpbf.pdf
PD -95185IRG4PC50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65V parameter distribution and higher efficiency thanG Generation
5.1. Size:153K international rectifier
irg4pc50u.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3
5.2. Size:635K infineon
irg4pc50upbf.pdf
PD -95186IRG4PC50UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.65VG parameter distribution and higher efficiency than Generation 3@VGE = 15V, IC = 27AE Industr
Datasheet: IRG4PC40UD
, IRG4PC40W
, IRG4PC50F
, IRG4PC50FD
, IRG4PC50K
, IRG4PC50KD
, IRG4PC50S
, IRG4PC50U
, FGH60N60SFD
, IRG4PC50W
, IRG4PF50W
, IRG4PF50WD
, IRG4PH20K
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, IRG4PH30K
, IRG4PH30KD
, IRG4PH40K
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