All IGBT. DIM1000XSM33-TS001 Datasheet

 

DIM1000XSM33-TS001 IGBT. Datasheet pdf. Equivalent


   Type Designator: DIM1000XSM33-TS001
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 10400
   Maximum Collector-Emitter Voltage |Vce|, V: 3300
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 1000
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 360
   Total Gate Charge (Qg), typ, nC: 17000
   Package: MODULE

 DIM1000XSM33-TS001 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM1000XSM33-TS001 Datasheet (PDF)

 0.1. Size:484K  dynex
 dim1000xsm33-tl001.pdf

DIM1000XSM33-TS001 DIM1000XSM33-TS001

DIM1000XSM33-TL001 Single Switch IGBT Module DS6104-1 June 2013 (LN30632) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.0V Low VCE(sat) Device IC (max) 1000A 10s Short Circuit Withstand IC(PK) (max) 2000A High Thermal Cycling Capability * Measured at the auxiliary terminals High Current Density Enhanced DMOS SPT I

 0.2. Size:485K  dynex
 dim1000xsm33-ts001.pdf

DIM1000XSM33-TS001 DIM1000XSM33-TS001

DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 (LN31016) FEATURES KEY PARAMETERS 10.2kV Isolation VCES 3300V VCE(sat) * (typ) 2.2V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base With

 7.1. Size:492K  dynex
 dim1000nsm33-ts.pdf

DIM1000XSM33-TS001 DIM1000XSM33-TS001

DIM1000NSM33-TS000 Single Switch IGBT Module Replaces DS6093-1 DS6093-2 October 2013 (LN31017) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary

 7.2. Size:532K  dynex
 dim1000ecm33-tl.pdf

DIM1000XSM33-TS001 DIM1000XSM33-TS001

DIM1000ECM33-TL000 IGBT Chopper Module Replaces DS6105-1 DS6105-2 March 2014 (LN31424) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlS

 7.3. Size:492K  dynex
 dim1000nsm33-tl.pdf

DIM1000XSM33-TS001 DIM1000XSM33-TS001

DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 (LN30637) FEATURES KEY PARAMETERS Low VCE(sat) Device VCES 3300V VCE(sat) * (typ) 2.0V 10s Short Circuit Withstand IC (max) 1000A High Thermal Cycling Capability IC(PK) (max) 2000A High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals Isolated AlSiC Base with

 7.4. Size:532K  dynex
 dim1000ecm33-ts.pdf

DIM1000XSM33-TS001 DIM1000XSM33-TS001

DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-1 DS6091-2 March 2014 (LN31425) FEATURES KEY PARAMETERS 10s Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.2V High Thermal Cycling Capability IC (max) 1000A High Current Density Enhanced DMOS SPT IC(PK) (max) 2000A Isolated AlSiC Base with AlN Substrates * Measured at the auxiliary terminal

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top