All IGBT. DIM1200ASM45-TS Datasheet

 

DIM1200ASM45-TS IGBT. Datasheet pdf. Equivalent

Type Designator: DIM1200ASM45-TS

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 12500

Maximum Collector-Emitter Voltage |Vce|, V: 4500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 1200

Maximum Junction Temperature (Tj), °C: 125

Rise Time, nS: 350

Package: MODULE

DIM1200ASM45-TS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

DIM1200ASM45-TS Datasheet (PDF)

0.1. dim1200asm45-ts001.pdf Size:458K _dynex

DIM1200ASM45-TS
DIM1200ASM45-TS

Data DIM1200ASM45-TS001 Single Switch IGBT Module Replaces DS6107-1 DS6107-2 October 2013 (LN31065) FEATURES KEY PARAMETERS  10.2kV Isolation VCES 4500V VCE(sat) * (typ) 2.7V  10µs Short Circuit Withstand IC (max) 1200A  High Thermal Cycling Capability IC(PK) (max) 2400A  High Current Density Enhanced DMOS SPT * Measured at the auxiliary terminals 

0.2. dim1200asm45-ts.pdf Size:454K _dynex

DIM1200ASM45-TS
DIM1200ASM45-TS

Data DIM1200ASM45-TS000 Single Switch IGBT Module Replaces DS6102-1 DS6102-2 October 2013 (LN31073) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 4500V VCE(sat) * (typ) 2.7V  High Thermal Cycling Capability IC (max) 1200A  High Current Density Enhanced DMOS SPT IC(PK) (max) 2400A  Isolated AlSiC Base With AlN Substrates * Measured at the aux

 7.1. dim1200fss12-a.pdf Size:418K _dynex

DIM1200ASM45-TS
DIM1200ASM45-TS

DIM1200FSS12-A000 Single Switch IGBT Module Replaces DS5834-1.2 DS5834-2 October 2010 (LN27661) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V  Non Punch Through Silicon IC (max) 1200A  Isolated Cu Base with Al2O3 Substrates IC(PK) (max) 2400A  Lead Free construction * Measured at the power busbars, not the auxiliary

7.2. dim1200fsm17-a.pdf Size:421K _dynex

DIM1200ASM45-TS
DIM1200ASM45-TS

DIM1200FSM17-A000 Single Switch IGBT Module Replaces DS5456-3.5 DS5456-4 November 2010 (LN27718) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 1700V VCE(sat) * (typ) 2.7V  High Thermal Cycling Capability IC (max) 1200A  Non Punch Through Silicon IC(PK) (max) 2400A  Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not th

 7.3. dim1200esm33-f.pdf Size:438K _dynex

DIM1200ASM45-TS
DIM1200ASM45-TS

DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 (LN28347) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 3300V VCE(sat) * (typ) 2.8V  High Thermal Cycling Capability IC (max) 1200A  Soft Punch Through Silicon IC(PK) (max) 2400A  Isolated AlSiC Base With AlN Substrates * Measured at the auxiliary terminals  L

7.4. dim1200fsm12-a.pdf Size:420K _dynex

DIM1200ASM45-TS
DIM1200ASM45-TS

DIM1200FSM12-A000 Single Switch IGBT Module Replaces DS5547-3.1 DS5547-4 October 2010 (LN27662) FEATURES KEY PARAMETERS  10µs Short Circuit Withstand VCES 1200V VCE(sat) * (typ) 2.2V  High Thermal Cycling Capability IC (max) 1200A  Non Punch Through Silicon IC(PK) (max) 2400A  Isolated AlSiC Base with AlN Substrates * Measured at the power busbars, not the

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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